20 stern ave. springfield, new jersey 07081 u.3.a. telephone: (973) 376-2922 (212) 227400s fax (973) 376-8960 npn silicon darlington transistors bd843 BD645 bd847 bd649 eplbase power darlington transistors (62.5w) bo 643, bd 645, bd 647, and bd 649 are monolithic npn silicon epibase power darlington transistors with diode and resistors in a to 220 ab plastic package (top-66). the collectors of the two transistors are electrically connected to the metallic mounting area. these darlington transistors for af applications are outstanding for particularly high current gain. together with bd 644, bo 646, bd 648, and bd 650, they are particularly suitable for use as complementary af push-pull output stages. type bd643 bo 643/bd 644 bd64s bo 645/8d 646 bd647 bd 647/bd 648 bd649 bd 649/bd 650 insulating nipple mica washer spring washer a 3 din 137 chang* in dimensional drawings in preparation. approx. weight 18 g.dlmanaion) in mm maximum ratings collector-emitter voltage collector-base voltage base-emitter voltage collector current collector-peak current [t < 10 ms) base current storage temperature range junction temperature total power dissipation vceo vcbo vebo h icm ib ti pfot bd643 45 45 5 8 12 150 BD645 60' 60 5 8 12 150 bd647 80 80 5 8 12 160 bd649 100 100 5 8 12 150 -55 to + 150 150 62,5 150 62,6 150 62,5 150 62,5 v v v a a ma c "c w thermal resistance junction to ambient air junction to case11 flthjc 80 &2 80 80 32 80 2 k/w k/w n.i semi-conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice information furnished by nj semi-conductors is believed to he both accurate and reliable m (he time or going to p/ess. however vi scnii-l iinductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-c onducturs encourages aistomcrs to verity ihiil datasheets are current before placing orders
static characteristics (tamb - 25 c) collector cutoff current (vcb " vcbmax) ^cbo (vcb - vcbmax; tamb = 100c) /cbo collector cutoff current (vce * 0.5 vcmax) 1ceo emitter cutoff current (veb = 5v) /ebo collector-emitter breakdown voltage (/c = 1 00 mai'l vuwceo collector-base breakdown voltage (/e = 5 ma) v(bn)cbo emitter-base breakdown voltage (4 =? 2 ma) v,br)ebo dc current gain (/c- 0.5 a. vce -3v) hfe l/c = 3a,vce = 3v) hre (/c = 6a,vce = 3v) hk base-emitter forward voltage (/c = 3a,vce = 3v) vbe collector-emitter saturation voltage' (/c-3a,/b = 12ma) vcem, forward voltage of the protective diode at 4 = 3a vf bd643 <0.2 <2 4s >4s >5 1600 >760 750 <2.5 <2 1.8 bd64s <0.2 <2 <0.5 <5 >60 >eo >5 1500 >750 750 <2.5 <2 1.8 bd847 <0.2 <2 <0.5 80 >6 1500 >750 750 <2.5 <2 1.8 bd643 bd045 bo 647 bd649 bd649 <0.2 <2 <0.5 <5 >100 >100 >5 1500 >760 750 <2.5 <2 1.8 ma ma ma ma v v v _ - - v v v dynamic characteristics (famb " 25 c) transition frequency (/c = 3a,vce = 3v,f=1mhz) (v cutoff frequency in common emitter configuration (/c = 3a;vce = 3v) u 7(>1) 60 7{>1) 60 7{>1) 60 7(>1) 60 mhz khz
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